IWN 2022

International Workshop on Nitride Semiconductors 2022

Intrinsic heterogeneous distribution of electrical dopants in GaN nanowires

Characterization

Nanowires

Abstract Talk

Novel Materials and Nanostructures

Strain relaxation of GaN grown on Mica through the formation of telephone cord buckles

Growth

Poster Presentation

III-N LEDs, rebound effects and energy savings

Optical devices

Energy efficiency: Physics and society

Correlated structural and electro-optical studies on single QDs in a nanowire – effect of bias

h-BN UV LED and quantum dots

Core-shell InGaN quantum wells – achievement of defect-free growth and dual color emission

Growth of InGaN

Salon Vienna

Session

Salon London

Panel discussion

New technologies often allow energy savings, possibly huge energy savings by offering way higher efficiencies. However, in reality the energy savings are considerably smaller than expected due to the societal response to a new technology. What is the case of GaN technologies? GaN has enabled the solid state lighting revolution. In the rump sessions we’ll assess the actual amplitude of these savings. For power electronics and the RF market, GaN is on the brink of becoming the major technology with the expectation to provide more energy efficient power conversion and communications. Are there side effects to expect and can we predict the societal response which is one of the most important parameters that determines the energy consumption?<br><br>Panelists include experts in GaN technologies for lighting and power electronics and RF electronics, and speakers more involved in the usage and societal aspects related to technology.

Room Berlin

Energy savings allowed by GaN technologies: myth or reality?

Rump Session

Discussion

Dr. Bruno Gayral

Vortrag

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