Session – Optical Devices
Energy efficiency: Physics and society

Programme

• 13:45 – 14:15 25 Min. 5 Min.

  • Invited Talk
  • IT 05

  Luminescence in InGaN LEDs – recent insights on diffusion and localization

  • Dr. Aurélien David (Fremont, CA / US)
• 14:15 – 14:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 011

  Vertical charge transport in (In,Ga)N quantum well systems – connecting atomistic electronic structure theory with macroscale drift-diffusion

  • Michael O'Donovan (Tyndall National Institute / IE)

   Novel Materials and Nanostructures, Optical devices
• 14:30 – 14:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 012

  Atomistic study of radiative and Auger recombination rates in c-plane InGaN/GaN quantum wells

  • Joshua McMahon (Tyndall National Institute / IE)

   Novel Materials and Nanostructures, Optical devices
• 14:45 – 15:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 013

  III-N LEDs, rebound effects and energy savings

  • Dr. Bruno Gayral (CEA-Grenoble / FR)

   Characterization, Optical devices
• 15:00 – 15:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 014

  Impact of point defects on the efficiency of InGaN/GaN quantum wells grown on GaN-on-Si epilayers with high dislocation density

  • Pierre Lottigier (EPFL / CH)

   Growth, Optical devices