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Abstract Talk
AT 014

Impact of point defects on the efficiency of InGaN/GaN quantum wells grown on GaN-on-Si epilayers with high dislocation density

Appointment

Date: 10/10/2022

Time: 15:00 – 15:15

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Vienna

Session

Energy efficiency: Physics and society

Topics

Growth
Optical devices

Authors

Pierre Lottigier (EPFL / CH), Dr. Davide Maria Di Paola (EPFL / CH), Sylvain Finot (CNRS / FR), Ya Wang (EPFL / CH), Danxuan Chen (EPFL / CH), Thomas Weatherley (EPFL / CH), Dr. Gwénolé Jacopin (CNRS / FR), Dr. Jean-François Carlin (EPFL / CH), Dr. Raphaël Butté (EPFL / CH), Professor Nicolas Grandjean (EPFL / CH)