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IWN 2022
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DE
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Dr. Jean-François Carlin
EPFL / CH
EPFL
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Further involvements
10/10/2022
15:00
–
15:15
12 Min.
3 Min.
Abstract Talk
AT 014
Impact of point defects on the efficiency of InGaN/GaN quantum wells grown on GaN-on-Si epilayers with high dislocation density
Growth, Optical devices
10/10/2022
Poster Presentation
PP 023
Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 227
Step-edges in InGaN/GaN quantum wells – a source of anisotropic carrier diffusion and emission broadening
Characterization, Growth
11/10/2022
Poster Presentation
PP 275
Passivating surface states in GaN thanks to two-dimensional MoS
2
coating
Characterization, Novel Materials and Nanostructures
13/10/2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 206
GaN surface stability in MOVPE environment and its impact on the quantum efficiency of InGaN/GaN quantum wells
Growth, Optical devices
13/10/2022
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 207
Probing individual nonradiative point defects in InGaN/GaN quantum wells using time-resolved cathodoluminescence
Characterization, Growth
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