Dr. Jean-François Carlin

Weitere Beteiligungen

• 10.10.2022

  15:00 – 15:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 014

  Impact of point defects on the efficiency of InGaN/GaN quantum wells grown on GaN-on-Si epilayers with high dislocation density

   Growth, Optical devices
• 10.10.2022

  • Poster Presentation
  • PP 023

  Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters

   Characterization, Optical devices
• 11.10.2022

  • Poster Presentation
  • PP 227

  Step-edges in InGaN/GaN quantum wells – a source of anisotropic carrier diffusion and emission broadening

   Characterization, Growth
• 11.10.2022

  • Poster Presentation
  • PP 275

  Passivating surface states in GaN thanks to two-dimensional MoS₂ coating

   Characterization, Novel Materials and Nanostructures
• 13.10.2022

  09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 206

  GaN surface stability in MOVPE environment and its impact on the quantum efficiency of InGaN/GaN quantum wells

   Growth, Optical devices
• 13.10.2022

  11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 207

  Probing individual nonradiative point defects in InGaN/GaN quantum wells using time-resolved cathodoluminescence

   Characterization, Growth