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Abstract Talk
AT 206

GaN surface stability in MOVPE environment and its impact on the quantum efficiency of InGaN/GaN quantum wells

Appointment

Date: 13/10/2022

Time: 09:45 – 10:00

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Moskau

Session

III-nitride heterostructures

Topics

Growth
Optical devices

Authors

Yao Chen (EPFL / CH), Dr. Jean-François Carlin (EPFL / CH), Professor Nicolas Grandjean (EPFL / CH)