Sylvain Finot

Further involvements

• 10/10/2022

  15:00 – 15:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 014

  Impact of point defects on the efficiency of InGaN/GaN quantum wells grown on GaN-on-Si epilayers with high dislocation density

   Growth, Optical devices
• 11/10/2022

  16:00 – 16:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 083

  Core-shell InGaN quantum wells – achievement of defect-free growth and dual color emission

   Growth, Novel Materials and Nanostructures
• 13/10/2022

  11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 223

  Core-shell GaN/Al(Ga)N heterostructures – from quantum wells for UV-A to monolayers for UV-C

   Growth, Optical devices