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Sylvain Finot

Institut Néel CNRS/UGA UPR2940 / FR

Institut Néel CNRS/UGA UPR2940

Weitere Beteiligungen

10.10.2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 014
Impact of point defects on the efficiency of InGaN/GaN quantum wells grown on GaN-on-Si epilayers with high dislocation density
Growth, Optical devices
11.10.2022
16:00 – 16:15 12 Min. 3 Min.
Abstract Talk
AT 083
Core-shell InGaN quantum wells – achievement of defect-free growth and dual color emission
Growth, Novel Materials and Nanostructures
13.10.2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 223
Core-shell GaN/Al(Ga)N heterostructures – from quantum wells for UV-A to monolayers for UV-C
Growth, Optical devices