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Pierre Lottigier

EPFL / CH

EPFL

Speaker

10/10/2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 014
Impact of point defects on the efficiency of InGaN/GaN quantum wells grown on GaN-on-Si epilayers with high dislocation density
Growth, Optical devices

Further involvements

10/10/2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 014
Impact of point defects on the efficiency of InGaN/GaN quantum wells grown on GaN-on-Si epilayers with high dislocation density
Growth, Optical devices