Session – Characterization
Structural Characterization, Growth model-1
08:30 – 10:00
AlGaN DUV emitters-1
10:30 – 12:00
AlGaN DUV emitters-2
15:30 – 16:30
Characterization of Electronic Devices-1
17:00 – 18:00
Session – Novel Materials & Nanostructures
Optical properties and epitaxy of III-Ntiride nanostructures
Selective area growth and processing
Growth of InGaN
Excitons in hexagonal and cubic GaN
Session – Electronic Devices
Ion implantation and annealing
High frequency I
High frequency II
MOS Devices
17:15 – 18:00
Session – Optical Devices
Display
Sensors
ams OSRAM
Lunch Symposium
12:15 – 13:15
Special emitters
Transport
Session – Growth
AlN HT annealing
Vertical GaN Processing
Doping
AlN Bulk Growth
Poster Session 2
13:15 – 15:30
Poster Session 3
18:00 – 20:15
11 October 2022