Session – Novel Materials & Nanostructures
Selective area growth and processing

Programme

• 10:30 – 11:00 25 Min. 5 Min.

  • Invited Talk
  • IT 19

  Porous (Ga,In)N layers and LEDs made by selective area sublimation

  • Dr. Benjamin Damilano (CRHEA-CNRS / FR)
• 11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 061

  N-polar InGaN film grown on ScAlMgO4 substrate without low-temperature buffer layer

  • Mohammed A. Najmi (King Abdullah University of Science and Technology / SA)

   Characterization, Novel Materials and Nanostructures
• 11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 062

  Chemically assisted selective area thermal etching of GaN micro-nanostructures via MOVPE

  • Dr. Pierre-Marie Coulon (CNRS-CRHEA / FR)

   Novel Materials and Nanostructures
• 11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 063

  Fabrication of GaN micropillars with low net doping concentration by selective-area growth

  • Prof. Dr. Michael Heuken (AIXTRON SE / DE)

   Growth, Novel Materials and Nanostructures
• 11:45 – 12:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 253

  Enhancement mechanism of light emission for InGaN/GaN nanocolumn arrays by Ag-based plasmonic crystals

  • Professor Takao Oto (Yamagata University / JP)

   Characterization, Novel Materials and Nanostructures