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IWN 2022
Programm
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Session
Session – Novel Materials & Nanostructures
Selective area growth and processing
Termin
Datum:
11.10.2022
Zeit:
10:30
–
12:00
Ort / Stream:
Salon London
Chair
Prof. Dr. Rachel A. Oliver
University of Cambridge / GB
Professor Markus Pristovsek
Nagoya University / JP
Programm
10:30
–
11:00
25 Min.
5 Min.
Invited Talk
IT 19
Porous (Ga,In)N layers and LEDs made by selective area sublimation
Dr. Benjamin Damilano (CRHEA-CNRS / FR)
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 061
N-polar InGaN film grown on ScAlMgO4 substrate without low-temperature buffer layer
Mohammed A. Najmi (King Abdullah University of Science and Technology / SA)
Characterization, Novel Materials and Nanostructures
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 062
Chemically assisted selective area thermal etching of GaN micro-nanostructures via MOVPE
Dr. Pierre-Marie Coulon (CNRS-CRHEA / FR)
Novel Materials and Nanostructures
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 063
Fabrication of GaN micropillars with low net doping concentration by selective-area growth
Prof. Dr. Michael Heuken (AIXTRON SE / DE)
Growth, Novel Materials and Nanostructures
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 253
Enhancement mechanism of light emission for InGaN/GaN nanocolumn arrays by Ag-based plasmonic crystals
Professor Takao Oto (Yamagata University / JP)
Characterization, Novel Materials and Nanostructures
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