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IWN 2022
Programm
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Prof. Dr. Michael Heuken
AIXTRON SE / DE
AIXTRON SE
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Datum
Vorsitz
12.10.2022
08:30
–
10:00
Session
ScAlN, charge confinement and trapping
Salon Rome
Vortrag
11.10.2022
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 063
Fabrication of GaN micropillars with low net doping concentration by selective-area growth
Growth, Novel Materials and Nanostructures
Weitere Beteiligungen
10.10.2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 022
Direct probing of the internal electrical field of a pn-GaN-junction
Characterization, Electronic devices
11.10.2022
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 063
Fabrication of GaN micropillars with low net doping concentration by selective-area growth
Growth, Novel Materials and Nanostructures
11.10.2022
13:15
–
15:30
Poster Presentation
PP 132
Technological challenges in the development of a normally-off monolithically integrated bidirectional GaN-based switch
Characterization, Electronic devices
11.10.2022
13:15
–
15:30
Poster Presentation
PP 149
Crystal-plane dependent influence of TMAH on trench etching for GaN Schottky and p-n diodes
Electronic devices, Growth
12.10.2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Characterization, Electronic devices
13.10.2022
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Characterization, Electronic devices
v1.27.1
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