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Abstract Talk
AT 061

N-polar InGaN film grown on ScAlMgO4 substrate without low-temperature buffer layer

Termin

Datum: 11.10.2022

Zeit: 11:00 – 11:15

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon London

Session

Selective area growth and processing

Themen

Characterization
Novel Materials and Nanostructures

Mitwirkende

Mohammed A. Najmi (King Abdullah University of Science and Technology / SA), Martin Velazquez-Rizo (King Abdullah University of Science and Technology / SA), Dr. Daisuke Iida (King Abdullah University of Science and Technology / SA), Pavel Kirilenko (King Abdullah University of Science and Technology / SA), Professor Kazuhiro Ohkawa (King Abdullah University of Science and Technology / SA)