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Dr. Daisuke Iida

King Abdullah University of Science and Technology (KAUST) / SA

King Abdullah University of Science and Technology (KAUST)

Vortrag

12.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 111
Highly efficient InGaN-based single-quantum-well red LEDs with an external quantum efficiency of over 4%
Novel Materials and Nanostructures, Optical devices

Weitere Beteiligungen

11.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 061
N-polar InGaN film grown on ScAlMgO4 substrate without low-temperature buffer layer
Characterization, Novel Materials and Nanostructures
11.10.2022
Poster Presentation
PP 122
Chemical mechanism of anodic oxidation of n-GaN in non-redox electrolytes
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 142
InGaN-Based resonant cavity Light-Emitting Diodes in red spectral region
Electronic devices, Optical devices
11.10.2022
Poster Presentation
PP 127
Investigating the effect of the number of superlattice pairs on the structural and optical properties of InGaN/GaN LEDs
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 220
Analysis of phonon transport in InGaN films and through InGaN/GaN heterointerfaces by Raman imaging using a double-laser system
Characterization, Optical devices
12.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 111
Highly efficient InGaN-based single-quantum-well red LEDs with an external quantum efficiency of over 4%
Novel Materials and Nanostructures, Optical devices
12.10.2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 150
Study of electrooxidation of n-GaN in oxalic acid – porous nanostructure formation and chemical mechanism
Characterization, Optical devices
14.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 249
Carrier dynamics of enhanced orange light emitting diode based on In-rich InGaN multiple quantum well structure hybridized by low-In-content InGaN single quantum well
Characterization, Growth