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Session

Session – Growth
Doping

Appointment

Date: 11/10/2022

Time: 15:30 – 16:30

Location / Stream:

Chair

Programme

15:30 – 16:00 25 Min. 5 Min.
Invited Talk
IT 24
Very high n and p-type conduction in (Al)GaN including the first demonstration of AlN pn homojunction Diodes
Prof. Dr. William Alan Doolittle (Georgia Institute of Technology / US)
16:00 – 16:15 12 Min. 3 Min.
Abstract Talk
AT 091
The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN
Dr. Shashwat Rathkanthiwar (North Carolina State University / US)
Characterization, Growth
16:15 – 16:30 12 Min. 3 Min.
Abstract Talk
AT 092
Decomposition and reaction analysis of triethylgallium for the effectivity of carbon incorporation in GaN MOVPE
Professor Shugo Nitta (Nagoya University / JP)
Growth