Session – Growth
Vertical GaN Processing

Programme

• 10:30 – 11:00 25 Min. 5 Min.

  • Invited Talk
  • IT 21

  Diffusion of Mg and H atoms in Mg-doped and Mg ion-implanted GaN through annealing

  • Dr. Tetsuo Narita (Toyota Central R&D Labs., Inc. / JP)
• 11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 075

  Progress of morphology roughening of GaN drift layer on GaN substrates with slight off-angle grown by MOVPE

  • Hirotaka Watanabe (Nagoya University / JP)

   Electronic devices, Growth
• 11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 076

  Laser slicing process for thinning GaN substrate and GaN on GaN devices

  • Professor Atsushi Tanaka (Nagoya University / JP)

   Electronic devices, Growth
• 11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 077

  Molecular beam epitaxy as a production tool for GaN-on-Si electronics

  • Sebastian Tamariz (Université Côte d’Azur, CNRS, CRHEA / FR)

   Electronic devices, Growth
• 11:45 – 12:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 078

  Scaling up and excellent uniformity of 300 mm GaN-on-Si epitaxy for micro LED applications

  • Dr. Atsushi Nishikawa (ALLOS Semiconductors GmbH / DE)

   Growth, Optical devices