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Programme - 14 October 2022

08:00

09:00

10:00

11:00

12:00

13:00

14:00

15:00

Room Berlin

Structural Characterization, Growth model-2

08:30 – 10:00

Late News Characterization

10:30 – 11:45

Defects and reliability in GaN electronics and optoelectronics: challenges and perspectives

12:15 – 13:00

Recent progress and prospects of micro-LEDs grown on sapphire nano-membranes

13:00 – 13:45

Reveal the true self of GaN by tunneling and avalanche

14:15 – 15:00

Closing & Award Ceremony

15:00 – 15:45

Salon London

Processing of h-BN

08:30 – 10:00

Late News Novel Materials & Nanostructures

10:30 – 11:30

Salon Rome

Modelling and characterization

08:30 – 10:00

Device processing technology

10:30 – 11:30

Salon Vienna

230nm UV-1

08:30 – 10:00

230 nm UV-2

10:30 – 11:30

Salon Moskau

InGaN and Micro LEDs

08:30 – 10:00

GaN Homoepitaxial Applications

10:30 – 11:30

14 October 2022

15:00

15:00 – 15:45
Social Programme
Closing
Closing & Award Ceremony
Room Berlin