Session – Characterization
Structural Characterization, Growth model-2

Programme

• 08:30 – 09:00 25 Min. 5 Min.

  • Invited Talk
  • IT 60

  Diffusion of Indium Along Threading Dislocations in InGaN Quantum Wells

  • Yudai Yamaguchi (Sony Group Corporation / JP)
• 09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 226

  Lattice-polarity and microstructures in AlN films grown on c-Al2O3 (0001) sapphire substrates by NH3-free high temperature MOCVD

  • Dr. Xuqiang Shen (National Institute of Advanced Industrial Science and Technology (AIST) / JP)

   Characterization, Growth
• 09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 227

  Investigation of Be diffusion coefficients for various crystallographic directions in GaN grown by HVPE

  • Dr. Kacper Sierakowski (Polish Academy of Sciences / PL)

   Characterization, Growth
• 09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 228

  Observation of interfacial strain relaxation and electron beam damage thresholds in Al_0.3In_0.7N/GaN heterostructures by transmission electron microscope

  • Keisuke Motoki (Georgia Institute of Technology / US)

   Characterization, Growth
• 09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 229

  Spectroscopic and high-resolution identification of Mg causing GaN pyramidal inversion domains limiting p-type doping

  • Dr. Axel R. Persson (Linköping University / SE)

   Characterization, Growth