.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Zachary Engel

Georgia Institute of Technology / US

Georgia Institute of Technology

Vortrag

11.10.2022
Poster Presentation
PP 271
Advancements in aluminum indium nitride growth over a wide compositional range – towards long wavelength III-Nitride optoelectronics
Characterization, Growth
12.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 116
Demonstration of Sc0.2Al0.8N HEMT structures with a sheet resistance of 150 Ω/□ and a sheet charge of 5.9x1013 cm-2 with phase pure, metal rich growth
Electronic devices, Growth
12.10.2022
Poster Presentation
PP 365
Improved nucleation of 111 ScN thin films
Characterization, Growth

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 221
Observation compositional modulation variation and reduction in rapidly grown AlGaN self-assembled superlattices by transmission electron microscopy
Characterization, Growth
11.10.2022
Poster Presentation
PP 271
Advancements in aluminum indium nitride growth over a wide compositional range – towards long wavelength III-Nitride optoelectronics
Characterization, Growth
12.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 116
Demonstration of Sc0.2Al0.8N HEMT structures with a sheet resistance of 150 Ω/□ and a sheet charge of 5.9x1013 cm-2 with phase pure, metal rich growth
Electronic devices, Growth
12.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 125
Vertical cation segregation during A_xB_1-xN epitaxy
Characterization, Growth
12.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 136
Quasi-vertical p-i-n diodes achieving high breakdown performance with GaN:Be I-layer and current spreading layer
Electronic devices, Growth
12.10.2022
Poster Presentation
PP 365
Improved nucleation of 111 ScN thin films
Characterization, Growth
12.10.2022
Poster Presentation
PP 341
p-type AlN based heteroepitaxial diodes with Schottky, PIN and junction barrier Schottky character achieving significant breakdown performance
Electronic devices, Growth
12.10.2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 180
Realization of AlN homojunction PN diodes
Electronic devices, Growth
14.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 228
Observation of interfacial strain relaxation and electron beam damage thresholds in Al_0.3In_0.7N/GaN heterostructures by transmission electron microscope
Characterization, Growth