Poster Session 1
Characterization

Programme

• • Poster Presentation
  • PP 001

  Predictive simulation of stress profiles of GaN on silicon from X-ray Diffraction scans, with validation by cycles of etching and X-ray diffraction, Raman and Wafer Curvature measurements

  • Dr. Matthew Charles (CEA-LETI / FR)

   Characterization, Growth
• • Poster Presentation
  • PP 002

  Impact of crystal quality on the dependence of exciton-radiative lifetime on temperature analyzed by phononic-excitonic-radiative model

  • Masaya Chizaki (Chiba University / JP)

   Characterization, Optical devices
• • Poster Presentation
  • PP 003

  Low temperature electrical transport properties of MBE-grown Mg-doped GaN subjected to a high temperature annealing process

  • Dr. Sylvie Contreras (Charles Coulomb Laboratory - L2C / FR)

   Characterization, Growth
• • Poster Presentation
  • PP 004

  Physics-based extraction of trap distribution in AlGaN/GaN HEMTs from stretched exponentials

  • Dr. Carlo De Santi (University of Padova / IT)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 005

  Quality improvement of m-plane GaN films grown by coalescence of ordered GaN nanocolumns

  • Dr. Amalia Fernando-Saavedra (Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) and Universidad Politécnica de Madrid (UPM) / ES)

   Characterization, Growth
• • Poster Presentation
  • PP 006

  Defects in thick GaN layers grown by HVPE

  • Dr. Antje Hirsch (Fraunhofer Institute for Integrated Systems and Device Technology IISB / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 007

  Thermal oxidation of [0001] GaN in water vapor compared with dry and wet oxidation – oxide properties and impact on GaN

  • Dr. Łukasz Janicki (PORT Polish Center for Technology Development / PL)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 008

  Effect of substrate bias stress on kink effect in GaN HEMT-on-Si substrate

  • Ramdas P. Khade (Indian Institute of Technology Madras / IN)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 009

  Analysis of proton-induced defects in AlGaN/GaN heterostructure by using magnetic field-based method

  • Dr. Dong-Seok Kim (KOMAC/KAERI / KR)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 010

  Analysis of dislocations in GaN crystals using defocus convergent-beam electron diffraction (CBED)

  • Dr. Jun Kojima (Nagoya University / JP)

   Characterization, Growth
• • Poster Presentation
  • PP 011

  Negative magnetoresistivity in highly doped N-Type GaN

  • Dr. Leszek Konczewicz (Polish Academy of Science / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 012

  Effect of point defects diffusion on the efficiency of InGaN quantum wells

  • Artur Lachowski (Polish Academy of Sciences / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 013

  Revisiting carrier diffusion in GaN – ambipolar versus exciton diffusion

  • Dr. Jonas Lähnemann (Paul Drude Institute for Solid State Electronics / DE)

   Characterization, Optical devices
• • Poster Presentation
  • PP 014

  X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition

  • Professor Mike Leszczyński (Polish Institute of Science / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 015

  Interface state effect on the properties of a Pd-based contact on p-GaN

  • Dr. Iryna Levchenko (Polish Academy of Science / PL)

   Characterization, Optical devices
• • Poster Presentation
  • PP 016

  Detailed studies on the decrease of Al incorporation into AlGaN grown by molecular beam epitaxy in the Ga-droplet regime

  • Dominika Majchrzak (Polish Academy of Sciences / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 017

  Dark spots around threading dislocations in GaN and AlGaN layers – size variations and impact on internal quantum efficiency

  • Dr. Carsten Netzel (Ferdinand-Braun Institute / DE)

   Characterization, Optical devices
• • Poster Presentation
  • PP 018

  Electrical activity of extended defects in unetched and etched c-AlN/Si(111) epitaxial films

  • Jakub Pongrácz (Institute of Physics of Materials, Czech Academy of Sciences / CZ)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 019

  Origins of electrical compensation in Si-doped HVPE GaN

  • Igor Prozheev (University of Helsinki / FI)

   Characterization, Growth
• • Poster Presentation
  • PP 020

  Photoluminescence from Be-doped GaN grown by metalorganic chemical vapor deposition

  • Prof. Dr. Michael A. Reshchikov (Virginia Commonwealth University / US)

   Characterization
• • Poster Presentation
  • PP 021

  Lateral diffusion of magnesium in GaN grown by HVPE

  • Dr. Kacper Sierakowski (Polish Academy of Sciences / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 023

  Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters

  • Dr. Matteo Buffolo (University of Padova / IT)

   Characterization, Optical devices
• • Poster Presentation
  • PP 025

  Rhenium-based low resistivity and low annealing temperature ohmic contacts to n-GaN – electrical and microstructural characteristics

  • Amit Shah (Tata Institute of Fundamental Research / IN)

   Characterization, Electronic devices