Poster Session 2
Characterization

Programm

• • Poster Presentation
  • PP 105

  Electrochemical short loop to assess the impact of plasma and surface treatments on n-GaN

  • Dr. Carole Pernel (University of Grenoble-Alpes / FR)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 106

  Core configurations and glide motion of Shockley partial dislocations in GaN by aberration-corrected HRTEM

  • Dr. Julita Smalc-Koziorowska (Polish Academy of Sciences / PL)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 107

  Magnetocrystalline anisotropy induced sensitivity effects in poly-crystalline magnetoelectric TiN/AlN/Ni cantilever

  • Dr. Bernd Haehnlein (Technische Universität Ilmenau / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 108

  Effect of n-type doping on time-resolved yellow band luminescence in GaN

  • František Hájek (Czech Academy of Sciences / CZ)

   Characterization, Optical devices
• • Poster Presentation
  • PP 109

  Relaxed InGaN pseudo-substrate for RGB LED growth – modeling and characterization of the porous GaN structure

  • Dr. Ilyes Medjahed (University of Grenoble-Alpes / FR)

   Characterization, Growth
• • Poster Presentation
  • PP 110

  Development of accurate small signal models for AlGaN/GaN MOS-HEMTs

  • Aakash Jadhav (IIT Roorkee / IN)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 111

  Deep levels and localized states in InGaN epilayer and photodetectors – characterization and suppression

  • Professor Hao Jiang (University of Sun Yat-sen / CN)

   Characterization, Growth
• • Poster Presentation
  • PP 112

  Electrical transport properties of highly doped N-Type GaN materials

  • Dr. Leszek Konczewicz (Polish Academy of Science / PL)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 113

  Temperature-dependence of the generation volume – prerequisite for quantitative analysis of electron-beam-induced signals

  • Dr. Jonas Lähnemann (Paul Drude Institute for Solid State Electronics / DE)

   Characterization, Optical devices
• • Poster Presentation
  • PP 114

  Passivation of p-GaN surface for ohmic contact formation

  • Dr. Iryna Levchenko (Polish Academy of Science / PL)

   Characterization, Optical devices
• • Poster Presentation
  • PP 115

  Detailed microstructural analysis of defects in 25mm thick GaN homo-epitaxial layers and varying substrates

  • Dr. Nadeemullah Mahadik (Naval Research Laboratory / US)

   Characterization, Growth
• • Poster Presentation
  • PP 116

  Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices

  • Sondre Michler (Siltronic AG / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 117

  Characterization of magnetron sputtered (Al,Sc)N layers by piezoelectric force microscopy (PFM)

  • Dr. Thomas Modes (Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 118

  Effects of GaN-cap layer thickness on luminescence properties of green luminescent InGaN-based multiple quantum wells

  • Dr. Hideaki Murotani (National Institute of Technology, Tokuyama College / JP)

   Characterization, Optical devices
• • Poster Presentation
  • PP 119

  Excitonic resonance in 3D and 2D InGaN structures

  • Dr. Kazimieras Nomeika (Vilnius University / LT)

   Characterization, Optical devices
• • Poster Presentation
  • PP 120

  Electrical compensation in aluminum rich Si-doped 90% AlGaN determined by positron annihilation and X-ray absorption spectroscopy

  • Igor Prozheev (University of Helsinki / FI)

   Characterization, Growth
• • Poster Presentation
  • PP 121

  Understanding microscopic properties of Light-Emitting Diodes (LEDs) from self-consistent analysis of macroscopic characteristics – current, voltage, internal quantum efficiency and forward capacitance

  • Professor Jong-In Shim (Hanyang University / KR)

   Characterization, Optical devices
• • Poster Presentation
  • PP 122

  Chemical mechanism of anodic oxidation of n-GaN in non-redox electrolytes

  • Artem Shushanian (King Abdullah University of Science and Technology / SA)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 123

  Polar dependence of carbon incorporation and yellow-green luminescence in spontaneous nucleation microdisks grown by Na-flux method

  • Dr. Zhiwei Si (Chinese Academy of Sciences / CN)

   Characterization
• • Poster Presentation
  • PP 124

  Investigation of zinc diffusion for various crystallographic directions in GaN grown by HVPE

  • Dr. Kacper Sierakowski (Polish Academy of Sciences / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 125

  Comparison of the crystal quality of InGaN/GaN multiple quantum wells grown on sapphire and GaN substrate using X-ray diffraction

  • Dr. Byeongchan So (Karlsruhe Institute of Technology (KIT) / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 126

  Modulated photocurrent spectroscopy study of the spectral response of InGaN based metal / semiconductor / metal devices

  • Ahmad Sauffi Yusof (Université de Lorraine / FR)

   Characterization, Optical devices
• • Poster Presentation
  • PP 127

  Investigating the effect of the number of superlattice pairs on the structural and optical properties of InGaN/GaN LEDs

  • Fatimah Alreshidi (King Abdullah University of Science and Technology | KAUST / SA)

   Characterization, Optical devices
• • Poster Presentation
  • PP 128

  Origin of the injection-dependent emission blueshift and linewidth broadening in III-Nitride light-emitting diodes

  • Nick Pant (University of Michigan / US)

   Characterization, Optical devices
• • Poster Presentation
  • PP 129

  Vibrational fingerprints of carbon point defects in Gallium Nitride (GaN)

  • Ivan Gamov (University of Würzburg / DE)

   Characterization