Poster Session 2
Novel Materials and Nanostructures

Programm

• • Poster Presentation
  • PP 169

  Aluminum self-catalyst growth of AlN nanorods by high-temperature MOCVD

  • Dr. Feras AlQatari (King Abdullah University of Science and Technology | KAUST / SA)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 170

  Self-formed compositional superlattices in m-plane Al_0.7In_0.3N alloys on a GaN substrate triggered by atomic ordering of In and Al along the c-axis

  • Professor Shigefusa F. Chichibu (Tohoku University / JP)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 171

  Cubic zincblende GaN for green LEDs – a material science challenge

  • Dr. Martin Frentrup (University of Cambridge / GB)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 172

  Surface functionalization of N-polar bulk n-GaN for ohmic contacts in vertical devices

  • Dr. Szymon Grzanka (Polish Academy of Science / PL)

   Novel Materials and Nanostructures, Optical devices
• • Poster Presentation
  • PP 173

  Low temperature cathodoluminescence study of a cubic zincblende InGaN/GaN single quantum well structure

  • Abhiram Gundimeda (University of Cambridge / GB)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 174

  Structural phase transition of c-BN layers at high temperature

  • Dr. Kazuyuki Hirama (NTT Basic Research Laboratories, NTT Corporation / JP)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 175

  Temperature induces giant shift of phonon energy in epitaxial boron nitride layers

  • Jakub Iwański (University of Warsaw / PL)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 176

  Comparison of InAlGaN and AlGaN HEMT structures for RF application

  • Justinas Jorudas (Center for Physical Sciences and Technology (FTMC) / LT)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 177

  Bandgap change in InN/AlN superlattices induced by lattice strain

  • Dr. Takahiro Kawamura (Mie University / JP)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 178

  Role of incorporation of carbon and oxygen atoms into nickel (111) substrates on the molecular beam epitaxy growth of hexagonal boron nitride monolayers

  • Professor Jianlin Liu (University of California, Riverside / US)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 179

  Investigating the carrier dynamics in InGaN/GaN core-shell nanorods

  • Kagiso Loeto (University of Cambridge / GB)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 180

  Non-radiative recombination centers in InGaN/GaN core-shell nanorods probed by cathodoluminescence imaging and spectroscopy

  • Kagiso Loeto (University of Cambridge / GB)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 181

  Temperature-dependent incorporation of boron in epitaxially grown BGaN compounds

  • Ewelina B. Możdżyńska (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 182

  Polarity inversion of GaN via AlN oxidation interlayer using metalorganic vapor phase epitaxy

  • Tomotaka Murata (Osaka University / JP)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 183

  N-polar Indium Nitride quantum dashes and quantum wires – MOCVD growth and characterization

  • Vineeta Muthuraj (University of California, Santa Barbara / US)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 184

  Inversion domain elimination in N-Polar GaN nanostructures on Si

  • Dr. Matt Brubaker (NIST / US)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 185

  Sub-surface back-scattered electron imaging of porous gallium nitride

  • Maruf Sarkar (University of Cambridge / GB)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 186

  Selective area growth of GaN nanorods by HVPE

  • Elias Semlali (Institut Pascal / FR)

   Growth, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 187

  Fabrication and investigation of vertical nanorod Light-Emitting Diodes (LEDs) for display application

  • Youngwook Shin (Hanyang University / KR)

   Novel Materials and Nanostructures, Optical devices
• • Poster Presentation
  • PP 188

  Dramatic reduction of the interaction between MOVPE h-BN and sapphire induced by wrinkles formation – Raman spectroscopy studies

  • Piotr Tatarczak (University of Warsaw / PL)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 189

  Resolving surface chemical states of p-GaN:Cs photocathodes by XPS analysis

  • Jana Schaber (Helmholtz-Zentrum Dresden-Rossendorf (HZDR) / DE)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 190

  Nanostructured metal (Cr, Zr, Co) nitride thin film electrodes sputtered grown for excellent energy storage devices

  • Ravikant Adalati (IIT Roorkee / IN)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 191

  2.29-kV GaN-based double-channel Schottky barrier diodes with high VON uniformity and thermal stability

  • Yu Wen (Xidian University / CN)

   Electronic devices, Novel Materials and Nanostructures