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IWN 2022
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Poster Session
Poster Session 2
Novel Materials and Nanostructures
Termin
Datum:
11.10.2022
Zeit:
13:15
–
15:30
Ort / Stream:
Topic Novel Materials and Nanostructures
Programm
Poster Presentation
PP 169
Aluminum self-catalyst growth of AlN nanorods by high-temperature MOCVD
Dr. Feras AlQatari (King Abdullah University of Science and Technology | KAUST / SA)
Growth, Novel Materials and Nanostructures
Poster Presentation
PP 170
Self-formed compositional superlattices in
m
-plane Al
0.7
In
0.3
N alloys on a GaN substrate triggered by atomic ordering of In and Al along the
c
-axis
Professor Shigefusa F. Chichibu (Tohoku University / JP)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 171
Cubic zincblende GaN for green LEDs – a material science challenge
Dr. Martin Frentrup (University of Cambridge / GB)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 172
Surface functionalization of N-polar bulk n-GaN for ohmic contacts in vertical devices
Dr. Szymon Grzanka (Polish Academy of Science / PL)
Novel Materials and Nanostructures, Optical devices
Poster Presentation
PP 173
Low temperature cathodoluminescence study of a cubic zincblende InGaN/GaN single quantum well structure
Abhiram Gundimeda (University of Cambridge / GB)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 174
Structural phase transition of c-BN layers at high temperature
Dr. Kazuyuki Hirama (NTT Basic Research Laboratories, NTT Corporation / JP)
Growth, Novel Materials and Nanostructures
Poster Presentation
PP 175
Temperature induces giant shift of phonon energy in epitaxial boron nitride layers
Jakub Iwański (University of Warsaw / PL)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 176
Comparison of InAlGaN and AlGaN HEMT structures for RF application
Justinas Jorudas (Center for Physical Sciences and Technology (FTMC) / LT)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 177
Bandgap change in InN/AlN superlattices induced by lattice strain
Dr. Takahiro Kawamura (Mie University / JP)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 178
Role of incorporation of carbon and oxygen atoms into nickel (111) substrates on the molecular beam epitaxy growth of hexagonal boron nitride monolayers
Professor Jianlin Liu (University of California, Riverside / US)
Growth, Novel Materials and Nanostructures
Poster Presentation
PP 179
Investigating the carrier dynamics in InGaN/GaN core-shell nanorods
Kagiso Loeto (University of Cambridge / GB)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 180
Non-radiative recombination centers in InGaN/GaN core-shell nanorods probed by cathodoluminescence imaging and spectroscopy
Kagiso Loeto (University of Cambridge / GB)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 181
Temperature-dependent incorporation of boron in epitaxially grown BGaN compounds
Ewelina B. Możdżyńska (Łukasiewicz Research Network - Institute of Microelectronics and Photonics / PL)
Characterization, Growth
Poster Presentation
PP 182
Polarity inversion of GaN via AlN oxidation interlayer using metalorganic vapor phase epitaxy
Tomotaka Murata (Osaka University / JP)
Growth, Novel Materials and Nanostructures
Poster Presentation
PP 183
N-polar Indium Nitride quantum dashes and quantum wires – MOCVD growth and characterization
Vineeta Muthuraj (University of California, Santa Barbara / US)
Growth, Novel Materials and Nanostructures
Poster Presentation
PP 184
Inversion domain elimination in N-Polar GaN nanostructures on Si
Dr. Matt Brubaker (NIST / US)
Growth, Novel Materials and Nanostructures
Poster Presentation
PP 185
Sub-surface back-scattered electron imaging of porous gallium nitride
Maruf Sarkar (University of Cambridge / GB)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 186
Selective area growth of GaN nanorods by HVPE
Elias Semlali (Institut Pascal / FR)
Growth, Novel Materials and Nanostructures
Poster Presentation
PP 187
Fabrication and investigation of vertical nanorod Light-Emitting Diodes (LEDs) for display application
Youngwook Shin (Hanyang University / KR)
Novel Materials and Nanostructures, Optical devices
Poster Presentation
PP 188
Dramatic reduction of the interaction between MOVPE h-BN and sapphire induced by wrinkles formation – Raman spectroscopy studies
Piotr Tatarczak (University of Warsaw / PL)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 189
Resolving surface chemical states of p-GaN:Cs photocathodes by XPS analysis
Jana Schaber (Helmholtz-Zentrum Dresden-Rossendorf (HZDR) / DE)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 190
Nanostructured metal (Cr, Zr, Co) nitride thin film electrodes sputtered grown for excellent energy storage devices
Ravikant Adalati (IIT Roorkee / IN)
Characterization, Novel Materials and Nanostructures
Poster Presentation
PP 191
2.29-kV GaN-based double-channel Schottky barrier diodes with high
V
ON uniformity and thermal stability
Yu Wen (Xidian University / CN)
Electronic devices, Novel Materials and Nanostructures
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