Zurück
  • Poster Presentation
  • PP 182

Polarity inversion of GaN via AlN oxidation interlayer using metalorganic vapor phase epitaxy

Termin

Datum:
Zeit:
Redezeit:
Diskussionszeit:
Ort / Stream:
Topic Novel Materials and Nanostructures

Session

Novel Materials and Nanostructures

Themen

  • Growth
  • Novel Materials and Nanostructures

Mitwirkende

Tomotaka Murata (Osaka University / JP), Kazuhisa Ikeda (Osaka University / JP), Professor Jun Yamasaki (Osaka University / JP), Dr. Tomoyuki Tanikawa (Osaka University / JP), Dr. Masahiro Uemukai (Osaka University / JP), Professor Ryuji Katayama (Osaka University / JP)

  • © Conventus Congressmanagement & Marketing GmbH