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Professor Czesław Skierbiszewski

Polish Academy of Sciences / PL

Polish Academy of Sciences

Invited Speaker

13.10.2022
08:30 – 09:00 25 Min. 5 Min.
Invited Talk
IT 51
How tunnel junctions changed our perception of III-N optoelectronic devices

Weitere Beteiligungen als Autor

10.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 021
Quantum confined Stark Effect screening efficiency induced by the optical excitation in symmetric double InGaN/GaN quantum wells – role of barrier width and temperature
Optical devices, Characterization
10.10.2022
Poster Presentation
PP 100
Direct experimental evidence for "dark charge" in wide InGaN quantum wells
Optical devices, Characterization
11.10.2022
Poster Presentation
PP 199
Towards superluminescent diodes with wide emission spectrum – application of new concepts of the active region
Optical devices, Novel Materials and Nanostructures
11.10.2022
17:15 – 17:30 12 Min. 3 Min.
Abstract Talk
AT 102
Probing of carrier diffusion length in III-nitride micro-light emitting diodes
Optical devices, Characterization
11.10.2022
Poster Presentation
PP 276
Superconducting NbN contact to III-Nitride LED
Optical devices, Novel Materials and Nanostructures
12.10.2022
Poster Presentation
PP 395
Red to blue wavelength-tunable light emitting diode
Optical devices, Novel Materials and Nanostructures
12.10.2022
Poster Presentation
PP 393
High temperature growth of InGaN in plasma assisted molecular beam epitaxy – a path towards improvement of quantum efficiency
Optical devices, Growth
12.10.2022
Poster Presentation
PP 328
Polarization-induced optical thyristor based on III-Nitrides
Optical devices, Electronic devices
12.10.2022
15:15 – 15:30 12 Min. 3 Min.
Abstract Talk
AT 155
Electrochemical etching of p-type GaN
Novel Materials and Nanostructures, Characterization
12.10.2022
15:15 – 15:30 12 Min. 3 Min.
Abstract Talk
AT 163
Blue laser diodes with nanoporous bottom cladding – device fabrication and properties
Optical devices, Characterization