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Professor Czesław Skierbiszewski

Polish Academy of Sciences / PL

Polish Academy of Sciences

Invited Speaker

13/10/2022
08:30 – 09:00 25 Min. 5 Min.
Invited Talk
IT 51
How tunnel junctions changed our perception of III-N optoelectronic devices

Further involvements

10/10/2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 021
Quantum confined Stark Effect screening efficiency induced by the optical excitation in symmetric double InGaN/GaN quantum wells – role of barrier width and temperature
Characterization, Optical devices
10/10/2022
Poster Presentation
PP 100
Direct experimental evidence for "dark charge" in wide InGaN quantum wells
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 199
Towards superluminescent diodes with wide emission spectrum – application of new concepts of the active region
Novel Materials and Nanostructures, Optical devices
11/10/2022
17:15 – 17:30 12 Min. 3 Min.
Abstract Talk
AT 102
Probing of carrier diffusion length in III-nitride micro-light emitting diodes
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 276
Superconducting NbN contact to III-Nitride LED
Novel Materials and Nanostructures, Optical devices
12/10/2022
Poster Presentation
PP 395
Red to blue wavelength-tunable light emitting diode
Novel Materials and Nanostructures, Optical devices
12/10/2022
Poster Presentation
PP 393
High temperature growth of InGaN in plasma assisted molecular beam epitaxy – a path towards improvement of quantum efficiency
Growth, Optical devices
12/10/2022
Poster Presentation
PP 328
Polarization-induced optical thyristor based on III-Nitrides
Electronic devices, Optical devices
12/10/2022
15:15 – 15:30 12 Min. 3 Min.
Abstract Talk
AT 155
Electrochemical etching of p-type GaN
Characterization, Novel Materials and Nanostructures
12/10/2022
15:15 – 15:30 12 Min. 3 Min.
Abstract Talk
AT 163
Blue laser diodes with nanoporous bottom cladding – device fabrication and properties
Characterization, Optical devices