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Prof. Dr. Plamen P. Paskov

Linköping University / SE

Linköping University

Weitere Beteiligungen

  • –   
    • Abstract Talk
    • AT 040
    Thermal conductivity characterization of (Y, Sc)AlN alloys
     Characterization
    • Poster Presentation
    • PP 153
    Compositionally graded channel HEMTs for improved linearity in low-noise RF amplifiers
     Characterization, Growth
    • Poster Presentation
    • PP 265
    Multi-step temperature growth process optimization of N-polar GaN and its application to HEMT structures
     Characterization, Growth
  • –   
    • Abstract Talk
    • AT 108
    Mobility limitations for 2DEGs in AlGaN/GaN HEMT structures depending on the Al content in the AlGaN barrier
     Characterization, Electronic devices
    • Poster Presentation
    • PP 316
    Anisotropic transport in N-polar GaN/AlGaN/GaN HEMTs grown on off-cut SiC substrates
     Characterization, Growth
  • –   
    • Abstract Talk
    • AT 230
    Anomalous transport properties of the two-dimensional electron gas in GaN-based high-electron-mobility transistor structures
     Characterization, Novel Materials and Nanostructures
  • –   
    • Abstract Talk
    • AT 258
    Understanding homoepitaxial GaN growth by hot-wall MOCVD
     Characterization, Growth
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