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Prof. Dr. Michael Kneissl

Technische Universität Berlin / DE

Technische Universität Berlin

Vorsitz

10.10.2022
08:30 – 09:30
Social Programme
Opening Ceremony
Grand Ballroom
10.10.2022
19:30 – 20:30
Plenary Session
Honorary Chairs
Room Berlin
14.10.2022
12:15 – 13:00
Plenary Session
Defects and reliability in GaN electronics and optoelectronics: challenges and perspectives
Room Berlin
14.10.2022
13:00 – 13:45
Plenary Session
Recent progress and prospects of micro-LEDs grown on sapphire nano-membranes
Room Berlin

Weitere Beteiligungen

10.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 033
Influence of detuning and surface roughness on the lasing threshold of optically pumped UVB VCSELs
Characterization, Optical devices
10.10.2022
Poster Presentation
PP 017
Dark spots around threading dislocations in GaN and AlGaN layers – size variations and impact on internal quantum efficiency
Characterization, Optical devices
11.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 057
Temperature dependent electroluminescence spectroscopy on AlGaN-based 235nm far-UVC LEDs with different active region growth temperatures
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 120
Electrical compensation in aluminum rich Si-doped 90% AlGaN determined by positron annihilation and X-ray absorption spectroscopy
Characterization, Growth
11.10.2022
Poster Presentation
PP 198
Single-mode lasing in optically pumped UVB VCSELs with circular relief structures
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 202
Ohmic Pd-based p-contacts on p-GaN for UVC-LEDs
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 196
Toward membrane-based UV-emitters with tunnel junctions
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 214
Observation of novel orientations in an AlN thin film grown on m-plane sapphire using electron backscatter diffraction
Characterization, Growth
11.10.2022
Poster Presentation
PP 295
Threshold and gain measurements of optically pumped UVC lasers with single quantum well active region
Characterization, Optical devices
12.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 120
Radiative recombination and current injection efficiencies in deep UV LEDs grown on AlN/sapphire substrates with different defect densities
Characterization, Optical devices
12.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 113
Core-shell AlGaN nanorods as ultraviolet Light Emitting Diodes
Novel Materials and Nanostructures, Optical devices
12.10.2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 122
Uncovering the role of point defects in the exponential EQE decrease inUVC LEDs emitting below 240 nm
Characterization, Optical devices
12.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 139
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements
Characterization, Optical devices
12.10.2022
11:45 – 12:00 12 Min. 3 Min.
Abstract Talk
AT 142
Operation-induced degradation of violet emitting InGaN-based laser diodes characterized by Hakki-Paoli method
Characterization, Optical devices
12.10.2022
Poster Presentation
PP 309
Electron beam induced currents in AlGaN UVC LEDs
Characterization, Optical devices
12.10.2022
Poster Presentation
PP 398
Spectrally pure far-UVC LED irradiation system for skin-tolerant inactivation of multi-resistant pathogens
Characterization, Optical devices
12.10.2022
Poster Presentation
PP 312
Growth of UVB tunnel-junction LEDs – impact of GaN interlayer thickness on morphology and electro-optical characteristics
Characterization, Growth
12.10.2022
Poster Presentation
PP 310
Understanding ohmic contact formation of V/Al/Ni/Au to Al-rich n-AlGaN
Characterization, Optical devices
13.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 222
UVC-LEDs grown on HTA-AlN/sapphire with low dislocation densities and highSi doping for strain management
Electronic devices, Growth
13.10.2022
11:45 – 12:00 12 Min. 3 Min.
Abstract Talk
AT 225
Deep UV‑LEDs with emission around 230 nm grown on single crystal AlN substrates
Electronic devices, Growth
14.10.2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 241
Development of AlGaN-based far-ultraviolet-C LEDs and their applications
Characterization, Optical devices