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IWN 2022
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DE
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Prof. Dr. Michael Kneissl
Technische Universität Berlin / DE
Technische Universität Berlin
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Date
Chair
10/10/2022
08:30
–
09:30
Social Programme
Opening Ceremony
Grand Ballroom
10/10/2022
19:30
–
20:30
Plenary Session
Honorary Chairs
Room Berlin
14/10/2022
12:15
–
13:00
Plenary Session
Defects and reliability in GaN electronics and optoelectronics: challenges and perspectives
Room Berlin
14/10/2022
13:00
–
13:45
Plenary Session
Recent progress and prospects of micro-LEDs grown on sapphire nano-membranes
Room Berlin
Further involvements
10/10/2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 033
Influence of detuning and surface roughness on the lasing threshold of optically pumped UVB VCSELs
Characterization, Optical devices
10/10/2022
Poster Presentation
PP 017
Dark spots around threading dislocations in GaN and AlGaN layers – size variations and impact on internal quantum efficiency
Characterization, Optical devices
11/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 057
Temperature dependent electroluminescence spectroscopy on AlGaN-based 235nm far-UVC LEDs with different active region growth temperatures
Characterization, Electronic devices
11/10/2022
Poster Presentation
PP 120
Electrical compensation in aluminum rich Si-doped 90% AlGaN determined by positron annihilation and X-ray absorption spectroscopy
Characterization, Growth
11/10/2022
Poster Presentation
PP 198
Single-mode lasing in optically pumped UVB VCSELs with circular relief structures
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 202
Ohmic Pd-based p-contacts on p-GaN for UVC-LEDs
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 196
Toward membrane-based UV-emitters with tunnel junctions
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 214
Observation of novel orientations in an AlN thin film grown on m-plane sapphire using electron backscatter diffraction
Characterization, Growth
11/10/2022
Poster Presentation
PP 295
Threshold and gain measurements of optically pumped UVC lasers with single quantum well active region
Characterization, Optical devices
12/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 120
Radiative recombination and current injection efficiencies in deep UV LEDs grown on AlN/sapphire substrates with different defect densities
Characterization, Optical devices
12/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 113
Core-shell AlGaN nanorods as ultraviolet Light Emitting Diodes
Novel Materials and Nanostructures, Optical devices
12/10/2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 122
Uncovering the role of point defects in the exponential EQE decrease inUVC LEDs emitting below 240 nm
Characterization, Optical devices
12/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 139
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements
Characterization, Optical devices
12/10/2022
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 142
Operation-induced degradation of violet emitting InGaN-based laser diodes characterized by Hakki-Paoli method
Characterization, Optical devices
12/10/2022
Poster Presentation
PP 309
Electron beam induced currents in AlGaN UVC LEDs
Characterization, Optical devices
12/10/2022
Poster Presentation
PP 398
Spectrally pure far-UVC LED irradiation system for skin-tolerant inactivation of multi-resistant pathogens
Characterization, Optical devices
12/10/2022
Poster Presentation
PP 312
Growth of UVB tunnel-junction LEDs – impact of GaN interlayer thickness on morphology and electro-optical characteristics
Characterization, Growth
12/10/2022
Poster Presentation
PP 310
Understanding ohmic contact formation of V/Al/Ni/Au to Al-rich n-AlGaN
Characterization, Optical devices
13/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 222
UVC-LEDs grown on HTA-AlN/sapphire with low dislocation densities and highSi doping for strain management
Electronic devices, Growth
13/10/2022
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 225
Deep UV‑LEDs with emission around 230 nm grown on single crystal AlN substrates
Electronic devices, Growth
14/10/2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 241
Development of AlGaN-based far-ultraviolet-C LEDs and their applications
Characterization, Optical devices
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