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Arne Debald

AIXTRON SE / DE

AIXTRON SE

Weitere Beteiligungen

10.10.2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 022
Direct probing of the internal electrical field of a pn-GaN-junction
Characterization, Electronic devices
11.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 063
Fabrication of GaN micropillars with low net doping concentration by selective-area growth
Growth, Novel Materials and Nanostructures
11.10.2022
Poster Presentation
PP 149
Crystal-plane dependent influence of TMAH on trench etching for GaN Schottky and p-n diodes
Electronic devices, Growth
12.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Characterization, Electronic devices
13.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Characterization, Electronic devices