Arne Debald

Further involvements

• 10/10/2022

  17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 022

  Direct probing of the internal electrical field of a pn-GaN-junction

   Characterization, Electronic devices
• 11/10/2022

  11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 063

  Fabrication of GaN micropillars with low net doping concentration by selective-area growth

   Growth, Novel Materials and Nanostructures
• 11/10/2022

  • Poster Presentation
  • PP 149

  Crystal-plane dependent influence of TMAH on trench etching for GaN Schottky and p-n diodes

   Electronic devices, Growth
• 12/10/2022

  09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 109

  Direct identification of the 2DEG emission of a heterostructure field-effect transistor

   Characterization, Electronic devices
• 13/10/2022

  11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 214

  Influence of space-charge region on luminescence in a lateral GaN superjunction

   Characterization, Electronic devices