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IWN 2022
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Roman Hrytsak
Institute of High Pressure Physics / PL
Institute of High Pressure Physics
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Vortrag
11.10.2022
Poster Presentation
PP 219
DFT based modeling of point defect diffusion across the In
0.125
Ga
0.875
N/GaN and In
0.25
Ga
0.75
N/GaN interfaces
Characterization, Growth
12.10.2022
Poster Presentation
PP 315
Modeling of the point defect migration across the AlN/GaN interfaces – ab initio study
Characterization, Growth
Weitere Beteiligungen
11.10.2022
Poster Presentation
PP 219
DFT based modeling of point defect diffusion across the In
0.125
Ga
0.875
N/GaN and In
0.25
Ga
0.75
N/GaN interfaces
Characterization, Growth
11.10.2022
Poster Presentation
PP 259
Influence of structural defects in the In
0.3
Ga
0.7
N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices
11.10.2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
12.10.2022
Poster Presentation
PP 315
Modeling of the point defect migration across the AlN/GaN interfaces – ab initio study
Characterization, Growth
13.10.2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth
v1.19.0
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