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IWN 2022
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Roman Hrytsak
Institute of High Pressure Physics / PL
Institute of High Pressure Physics
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Date
Speaker
11/10/2022
Poster Presentation
PP 219
DFT based modeling of point defect diffusion across the In
0.125
Ga
0.875
N/GaN and In
0.25
Ga
0.75
N/GaN interfaces
Characterization, Growth
12/10/2022
Poster Presentation
PP 315
Modeling of the point defect migration across the AlN/GaN interfaces – ab initio study
Characterization, Growth
Further involvements
11/10/2022
Poster Presentation
PP 219
DFT based modeling of point defect diffusion across the In
0.125
Ga
0.875
N/GaN and In
0.25
Ga
0.75
N/GaN interfaces
Characterization, Growth
11/10/2022
Poster Presentation
PP 259
Influence of structural defects in the In
0.3
Ga
0.7
N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices
11/10/2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
12/10/2022
Poster Presentation
PP 315
Modeling of the point defect migration across the AlN/GaN interfaces – ab initio study
Characterization, Growth
13/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth
v1.19.0
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