Session – Growth
Doping Applications

Programme

• 16:15 – 16:45 25 Min. 5 Min.

  • Invited Talk
  • IT 45

  Mg implantation for selective area p-type doping and its device applications

  • Professor Spyridon Pavlidis (North Carolina State University / US)
• 16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 189

  Compensation control of n-type GaN using intrinsic carbon from TMGaprecursor in MOVPE growth for vertical GaN power devices

  • Dr. Piotr Kruszewski (Polish Academy of Sciences / PL)
  • Dr. Paweł Prystawko (Polish Academy of Science / PL)

   Electronic devices, Growth
• 17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 190

  Si doping effects in AlGaN channel layer on performance of N-polar AlGaN/AlN heterojunction FETs

  • Prof. Dr. Narihito Okada (Yamaguchi University / JP)

   Electronic devices, Growth
• 17:15 – 17:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 191

  Mg doping in In-rich InAlN layers

  • Ondrej Pohorelec (Slovak Academy Of Sciences / SK)

   Characterization, Growth
• 17:30 – 17:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 192

  Recent progress in HVPE growth of doped GaN single crystals and resulting wafers

  • Dr. Sven Jachalke (Freiberger Compound Materials GmbH / DE)

   Characterization, Growth