Poster Session 4
Characterization

Programme

• • Poster Presentation
  • PP 305

  Band alignment of BGaN films with AlN and GaN using a novel statistical method

  • Dr. Feras AlQatari (King Abdullah University of Science and Technology | KAUST / SA)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 308

  Silicon diffusion and n-type doping in AlN

  • Valeria Bonito Oliva (IKZ / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 309

  Electron beam induced currents in AlGaN UVC LEDs

  • Douglas Cameron (University of Strathclyde / GB)

   Characterization, Optical devices
• • Poster Presentation
  • PP 310

  Understanding ohmic contact formation of V/Al/Ni/Au to Al-rich n-AlGaN

  • Dr. Hyun Kyong Cho (Ferdinand-Braun-Institut gGmbH Leibniz-Institut für Höchstfrequenztechnik / DE)

   Characterization, Optical devices
• • Poster Presentation
  • PP 311

  Raman spectroscopy of GaN layers grown by MOVPE and its correlations with other characterisation techniques

  • Dr. Filip Dominec (FZU - Institute of Physics of the Czech Academy of Sciences / CZ)

   Characterization, Growth
• • Poster Presentation
  • PP 312

  Growth of UVB tunnel-junction LEDs – impact of GaN interlayer thickness on morphology and electro-optical characteristics

  • Massimo Grigoletto (Technische Universitat Berlin / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 313

  Crack formation mechanism of sputtered and annealed AlN on c- and a-plane sapphire

  • Prof. Dr. Yusuke Hayashi (Osaka University / JP)

   Characterization, Growth
• • Poster Presentation
  • PP 314

  Quantitative dislocation analysis of GaN in the scanning electron microscope

  • Kieran Hiller (University of Strathclyde / GB)

   Characterization, Optical devices
• • Poster Presentation
  • PP 315

  Modeling of the point defect migration across the AlN/GaN interfaces – ab initio study

  • Roman Hrytsak (Institute of High Pressure Physics / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 316

  Anisotropic transport in N-polar GaN/AlGaN/GaN HEMTs grown on off-cut SiC substrates

  • Dr. Philipp Kühne (Linköping University / SE)

   Characterization, Growth
• • Poster Presentation
  • PP 317

  Carrier dynamics in and around trench defects in InGaN QWs probed by time resolved cathodoluminescence

  • Dr. Gunnar Kusch (University of Cambridge / GB)

   Characterization, Optical devices
• • Poster Presentation
  • PP 318

  Investigation of self-compensation effects in ultra-highly Si- and Ge-doped n-GaN

  • Frederik Lüßmann (Technische Universität Braunschweig / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 319

  Near-zero temperature coefficient of resistance for TaN resistors on GaN substrate

  • Bazila Parvez (IIT Bombay / IN)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 320

  Negative thermal quenching of photoluminescence in GaN

  • Prof. Dr. Michael A. Reshchikov (Virginia Commonwealth University / US)

   Characterization
• • Poster Presentation
  • PP 321

  Probing electron localization induced by intrinsic alloy disorder in InGaN/GaN quantum wells by scanning tunneling electroluminescence microscopy

  • Mylène Sauty (LPMC, Ecole polytechnique / FR)

   Characterization, Optical devices
• • Poster Presentation
  • PP 322

  Defects in ammonothermal GaN crystals

  • Prof. Dr. Janusz L. Weyher (Polish Academy of Science / PL)
  • Magdalena A. Zając (Polish Academy of Science / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 323

  Real-space analysis on surface potential fluctuations of Al₂O₃/GaN interfaces by scanning nonlinear dielectric microscopy

  • Professor Kohei Yamasue (Tohoku University / JP)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 324

  High-temperature properties of electron transport in semi-insulating GaN:Mn monocrystals

  • Dr. Marcin Zajac (Polish Academy of Science / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 325

  Dependence of H-concentration on the observed reverse leakage current in p–n diodes

  • Dr. Céline Noël (imec / BE)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 326

  Evaluation and processing of Si/Ge-doped free-standing Ga and N-terminated c-plane wurtzite GaN surface quality

  • Mohammadreza Rostami (Technical University of Munich / DE)

   Characterization, Novel Materials and Nanostructures