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IWN 2022
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Poster Session
Poster Session 2
Optical devices
Termin
Datum:
11.10.2022
Zeit:
13:15
–
15:30
Ort / Stream:
Topic Optical devices
Programm
Poster Presentation
PP 192
Towards highly integrated single photon avalanche detectors based on InGaN
André Schendel (Technische Universität Braunschweig / DE)
Characterization, Optical devices
Poster Presentation
PP 193
Spatial and temperature variation of the Huang-Rhys factor in InGaN quantum wells
Conny Becht (Institue of physics, Chemnitz university of technology / DE)
Characterization, Optical devices
Poster Presentation
PP 194
High resolution investigation of a grating-stabilized laser with a Fabry-Pérot-Interferometer
Dominic J. Kunzmann (TU Chemnitz / DE)
Characterization, Optical devices
Poster Presentation
PP 195
A study of reflectance variation according to temperature shift of GaN-based LEDs using UV-A band
Dong-Min Jeon (Hanyang University / KR)
Characterization, Optical devices
Poster Presentation
PP 196
Toward membrane-based UV-emitters with tunnel junctions
Estrella Torres Vásquez (Chalmers University of Technology / SE)
Characterization, Optical devices
Poster Presentation
PP 197
Current injection emission by high current density over 300 kA/cm
2
from 280 nm LD structure using polarization doped p-cladding layer
Fumiya Chugenji (RIKEN / JP)
Growth, Optical devices
Poster Presentation
PP 198
Single-mode lasing in optically pumped UVB VCSELs with circular relief structures
Giulia Cardinali (Techische Universität Berlin / DE)
Characterization, Optical devices
Poster Presentation
PP 199
Towards superluminescent diodes with wide emission spectrum – application of new concepts of the active region
Professor Tadeusz Suski (Polish Academy of Science / PL)
Novel Materials and Nanostructures, Optical devices
Poster Presentation
PP 200
Bright emission at reverse bias after trailing edge of driving pulse in wide InGaN quantum wells
Jannina J. Tepaß (Chemnitz University of Technology / DE)
Characterization, Optical devices
Poster Presentation
PP 201
Towards realization of 2D-array of horizontal-to-vertical surface emitting laser diode
Kiran Saba (Instytut Wysokich Ciśnień Polskiej Akademii Nauk (IWC PAN, Unipress) / PL)
Characterization, Optical devices
Poster Presentation
PP 202
Ohmic Pd-based p-contacts on p-GaN for UVC-LEDs
Dr. Luca Sulmoni (Technische Universität Berlin / DE)
Characterization, Optical devices
Poster Presentation
PP 203
Facet etch optimization for III-Nitride integrated lasers
Dr. Zhi Li (Tyndall National Institute / IE)
Optical devices
Poster Presentation
PP 204
Laser lift-off of GaN LEDs with ultrashort pulses
Steffen Bornemann (TU Braunschweig / DE)
Characterization, Optical devices
Poster Presentation
PP 205
Far-UVC emission of polarity-engineered AlGaN MQW using carbon nanotube-based cold cathode electron beam
Dr. Uiho Choi (Tech University of Korea / KR)
Novel Materials and Nanostructures, Optical devices
Poster Presentation
PP 206
Efficient packaging of light-emitting devices using miniaturized mirrors
Dr. Ulli Hansen (MSG Lithoglas GmbH / DE)
Electronic devices, Optical devices
Poster Presentation
PP 207
Utilization of gap mode in color conversion for micro LED
Zhizhong Chen (Peking University / CN)
Novel Materials and Nanostructures, Optical devices
Poster Presentation
PP 208
Simulation of the mode competition in nitride laser diodes with a broad ridge width
Eduard Kuhn (TU Chemnitz / DE)
Electronic devices, Optical devices
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