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Abstract Talk
AT 098

Performance improvements of P-channel GaN HFETs by atomic layer etching using nitrogen plasma

Termin

Datum: 11.10.2022

Zeit: 17:15 – 17:30

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Session

Themen

Electronic devices
Novel Materials and Nanostructures

Mitwirkende

Shonosuke Kimura (Tokyo Institute of Technology / JP), Dr. Takuya Hoshii (Tokyo Institute of Technology / JP), Professor Kuniyuki Kakushima (Tokyo Institute of Technology / JP), Professor Hitoshi Wakabayashi (Tokyo Institute of Technology / JP), Professor Kazuo Tsutsui (Tokyo Institute of Technology / JP)