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  • Abstract Talk
  • AT 088

Enhancement-mode AlN/GaN HEMTs on Si for RF applications

Termin

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Salon Rome

Session

High frequency II

Themen

  • Electronic devices
  • Novel Materials and Nanostructures

Mitwirkende

Dr. Hanlin Xie (Institute of Microelectronics, A*STAR / SG), Zhongzhiguang Lu (Nangyang Technological University / SG), Dr. Yue Wang (Singapore MIT-Alliance for Research and Technology Centre / SG), Hanchao Li (Nangyang Technological University / SG), Professor Zhihong Liu (Xidian University / CN), Dr. Lakshmi Kanta Bera (Institute of Microelectronics, A*STAR / SG), Dr. Navab Singh (Institute of Microelectronics, A*STAR / SG), Dr. Surasit Chung (Institute of Microelectronics, A*STAR / SG), Dr. K. Michael Han (Institute of Microelectronics, A*STAR / SG), Professor Yuanjin Zheng (Nangyang Technological University / SG), Dr. Kenneth Lee (Singapore MIT-Alliance for Research and Technology Centre / SG), Professor Geok Ing Ng (Nangyang Technological University / SG)

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