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Abstract Talk
AT 088

Enhancement-mode AlN/GaN HEMTs on Si for RF applications

Appointment

Date: 11/10/2022

Time: 16:15 – 16:30

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Rome

Session

High frequency II

Topics

Electronic devices
Novel Materials and Nanostructures

Authors

Dr. Hanlin Xie (Institute of Microelectronics, A*STAR / SG), Zhongzhiguang Lu (Nangyang Technological University / SG), Dr. Yue Wang (Singapore MIT-Alliance for Research and Technology Centre / SG), Hanchao Li (Nangyang Technological University / SG), Professor Zhihong Liu (Xidian University / CN), Dr. Lakshmi Kanta Bera (Institute of Microelectronics, A*STAR / SG), Dr. Navab Singh (Institute of Microelectronics, A*STAR / SG), Dr. Surasit Chung (Institute of Microelectronics, A*STAR / SG), Dr. K. Michael Han (Institute of Microelectronics, A*STAR / SG), Professor Yuanjin Zheng (Nangyang Technological University / SG), Dr. Kenneth Lee (Singapore MIT-Alliance for Research and Technology Centre / SG), Professor Geok Ing Ng (Nangyang Technological University / SG)