Dr. Farid Medjdoub

Weitere Beteiligungen

• 10.10.2022

  14:15 – 14:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 007

  AlGaN channel high electron mobility transistors on bulk AlN substrate

   Electronic devices, Novel Materials and Nanostructures
• 10.10.2022

  14:30 – 14:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 008

  Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field

   Electronic devices, Novel Materials and Nanostructures
• 10.10.2022

  • Poster Presentation
  • PP 027

  Temperature dependence of transport properties in AlGaN channel heterostructures

   Characterization, Electronic devices
• 11.10.2022

  11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 077

  Molecular beam epitaxy as a production tool for GaN-on-Si electronics

   Electronic devices, Growth
• 12.10.2022

  09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 118

  Electric field imaging in AlGaN/GaN high electron mobility transistors grown on AlN substrates

   Characterization, Electronic devices