Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.
IWN 2022
Programm
Personen
Suche
EN
Alle Personen
Satoshi Kurai
Sortiert nach Typ
Datum
Weitere Beteiligungen
10.10.2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 035
Impact of buffer layer on flatness and crystalline quality of N-polar AlN on sapphire substrate
Electronic devices, Growth
10.10.2022
16:30
–
16:45
12 Min.
3 Min.
Abstract Talk
AT 036
Control of AlN polarity on sapphire substrate and growth of AlN with both Al- and N-polarities
Growth, Optical devices
11.10.2022
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 068
Investigation of electrical properties of N-Polar AlGaN/AlN heterostructure field effect transistors
Electronic devices, Growth
11.10.2022
Poster Presentation
PP 118
Effects of GaN-cap layer thickness on luminescence properties of green luminescent InGaN-based multiple quantum wells
Characterization, Optical devices
11.10.2022
16:00
–
16:15
12 Min.
3 Min.
Abstract Talk
AT 081
High temperature stimulated emission from AlGaN UV-C multiple quantum wells
Characterization, Optical devices
12.10.2022
Poster Presentation
PP 359
Improvement of crystallinity and flatness of N-polar AlN by polarity inversion from Al-polar AlN on vicinal sapphire substrate
Electronic devices, Growth
12.10.2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 190
Si doping effects in AlGaN channel layer on performance of N-polar AlGaN/AlN heterojunction FETs
Electronic devices, Growth
© Conventus Congressmanagement & Marketing GmbH
Impressum
Datenschutz