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Professor Yoichi Yamada

Weitere Beteiligungen

  • –   
    • Abstract Talk
    • AT 035
    Impact of buffer layer on flatness and crystalline quality of N-polar AlN on sapphire substrate
     Electronic devices, Growth
  • –   
    • Abstract Talk
    • AT 036
    Control of AlN polarity on sapphire substrate and growth of AlN with both Al- and N-polarities
     Growth, Optical devices
  • –   
    • Abstract Talk
    • AT 068
    Investigation of electrical properties of N-Polar AlGaN/AlN heterostructure field effect transistors
     Electronic devices, Growth
    • Poster Presentation
    • PP 118
    Effects of GaN-cap layer thickness on luminescence properties of green luminescent InGaN-based multiple quantum wells
     Characterization, Optical devices
  • –   
    • Abstract Talk
    • AT 081
    High temperature stimulated emission from AlGaN UV-C multiple quantum wells
     Characterization, Optical devices
    • Poster Presentation
    • PP 359
    Improvement of crystallinity and flatness of N-polar AlN by polarity inversion from Al-polar AlN on vicinal sapphire substrate
     Electronic devices, Growth
  • –   
    • Abstract Talk
    • AT 190
    Si doping effects in AlGaN channel layer on performance of N-polar AlGaN/AlN heterojunction FETs
     Electronic devices, Growth
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