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Makoto Miyoshi

Nagoya Institute of Technology / JP

Nagoya Institute of Technology

Vortrag

12.10.2022
Poster Presentation
PP 361
Semipolar {11-22} AlInN epitaxial layers grown on a fully relaxed semipolar GaInN/GaN/m-plane sapphire template by MOCVD
Characterization, Growth

Weitere Beteiligungen

12.10.2022
Poster Presentation
PP 361
Semipolar {11-22} AlInN epitaxial layers grown on a fully relaxed semipolar GaInN/GaN/m-plane sapphire template by MOCVD
Characterization, Growth
12.10.2022
Poster Presentation
PP 342
AlGaInN/GaN HEMTs on single-crystal AlN substrate
Electronic devices, Growth