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Prof. Dr. Frank Bertram

Experimental Physics / DE

Experimental Physics

Vorsitz

11.10.2022
15:30 – 16:30
Session
Growth of InGaN
Salon London

Vortrag

12.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Characterization, Electronic devices

Weitere Beteiligungen

10.10.2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 018
Epitaxy of high quality AlN and AlGaN layers on Si (111) by reactive pulsed sputtering
Characterization, Growth
10.10.2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 022
Direct probing of the internal electrical field of a pn-GaN-junction
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 266
Growth of epitaxial GaN by reactive magnetron sputtering
Characterization, Growth
12.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Characterization, Electronic devices
12.10.2022
Poster Presentation
PP 380
GaN quantum dots in vertical resonant cavity structure
Characterization, Novel Materials and Nanostructures
13.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Characterization, Electronic devices