Dr. Holger Kalisch

Weitere Beteiligungen

• 10.10.2022

  17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 022

  Direct probing of the internal electrical field of a pn-GaN-junction

   Characterization, Electronic devices
• 11.10.2022

  11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 072

  A resonant electro-optic UV-Vis modulator based on an AlGaN/GaN heterostructure

   Novel Materials and Nanostructures, Optical devices
• 11.10.2022

  11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 063

  Fabrication of GaN micropillars with low net doping concentration by selective-area growth

   Growth, Novel Materials and Nanostructures
• 11.10.2022

  • Poster Presentation
  • PP 149a

  Depletion- and enhancement-mode p-Channel MISHFET based on p-GaN/GaN/AlGaN heterostructures

   Characterization, Electronic devices
• 11.10.2022

  • Poster Presentation
  • PP 132

  Technological challenges in the development of a normally-off monolithically integrated bidirectional GaN-based switch

   Characterization, Electronic devices
• 11.10.2022

  • Poster Presentation
  • PP 149

  Crystal-plane dependent influence of TMAH on trench etching for GaN Schottky and p-n diodes

   Electronic devices, Growth
• 12.10.2022

  09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 115

  Charge-trapping flash memory based on AlGaN/GaN/AlGaN double heterostructures

   Electronic devices, Novel Materials and Nanostructures
• 12.10.2022

  09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 109

  Direct identification of the 2DEG emission of a heterostructure field-effect transistor

   Characterization, Electronic devices
• 13.10.2022

  11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 214

  Influence of space-charge region on luminescence in a lateral GaN superjunction

   Characterization, Electronic devices