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Prof. Dr. Tsutomu Uesugi

Nagoya University / JP

Nagoya University

Weitere Beteiligungen

10.10.2022
16:15 – 16:30 12 Min. 3 Min.
Abstract Talk
AT 029
Increase of reverse leakage current at GaN p-n junctions having different blocking voltages after forward current stress
Characterization, Electronic devices
11.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 047
Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability
Electronic devices