Session – Novel Materials & Nanostructures
h-BN UV LED and quantum dots

Programme

• 14:15 – 14:45 25 Min. 5 Min.

  • Invited Talk
  • IT 38

  Deep-ultraviolet light-emitting diodes with hexagonal BN

  • Professor Jianchang Yan (Chinese Academy of Sciences / CN)
• 14:45 – 15:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 153

  Correlated structural and electro-optical studies on single QDs in a nanowire – effect of bias

  • Dr. Bruno Gayral (CEA-Grenoble / FR)

   Characterization, Novel Materials and Nanostructures
• 15:00 – 15:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 154

  Single photon emission and carrier dynamics in GaN/AlN quantum dots

  • Johann Stachurski (Ecole Polytechnique Fédérale de Lausanne / CH)

   Characterization, Novel Materials and Nanostructures
• 15:15 – 15:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 155

  Electrochemical etching of p-type GaN

  • Natalia Fiuczek (Institute of High Pressure Physics Polish Academy of Sciences / PL)

   Characterization, Novel Materials and Nanostructures
• 15:30 – 15:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 156

  ALE of AlGaN/GaN and ALD of GaN/AlN applying in-situ atomic layer real time monitor

  • Xuemei Wang (SENTECH Instruments GmbH / DE)

   Novel Materials and Nanostructures