Session – Growth
III-nitride heterostructures

Programm

• 08:30 – 09:00 25 Min. 5 Min.

  • Invited Talk
  • IT 53

  Competition between built-in polarization and p-n junction field in III-nitride heterostructures

  • Dr. Henryk Turski (Polish Academy of Sciences / PL)
• 09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 203

  Growth and characterization of MQWs of BAlGaN with AlGaN barrier

  • Thomas O'Connor (Tyndall National Institute / IE)

   Characterization, Growth
• 09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 204

  Optimizing thickness and composition gradient in core-shell InGaN/GaN structures

  • Irene Manglano Clavero (Technische Universität Braunschweig / DE)

   Growth, Optical devices
• 09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 205

  Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures

  • Mikołaj Grabowski (Institute of High Pressure Physics PAS / PL)

   Characterization, Growth
• 09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 206

  GaN surface stability in MOVPE environment and its impact on the quantum efficiency of InGaN/GaN quantum wells

  • Yao Chen (EPFL / CH)

   Growth, Optical devices