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IWN 2022
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Artur Lachowski
Polish Academy of Sciences / PL
Polish Academy of Sciences
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Vortrag
10.10.2022
Poster Presentation
PP 012
Effect of point defects diffusion on the efficiency of InGaN quantum wells
Characterization, Growth
Weitere Beteiligungen
10.10.2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
10.10.2022
Poster Presentation
PP 012
Effect of point defects diffusion on the efficiency of InGaN quantum wells
Characterization, Growth
11.10.2022
Poster Presentation
PP 164
Summary of studies on the effect of H
2
used during the growth of quantum barriers on InGaN quantum wells
Growth, Optical devices
11.10.2022
Poster Presentation
PP 259
Influence of structural defects in the In
0.3
Ga
0.7
N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices
11.10.2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
13.10.2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth
v1.20.0
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