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Professor Nandita DasGupta

Indian Institute of Technology Madras / IN

Indian Institute of Technology Madras

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 008
Effect of substrate bias stress on kink effect in GaN HEMT-on-Si substrate
Characterization, Electronic devices
10.10.2022
Poster Presentation
PP 030
Extraction and optimization of a complete set of compact model DC parameters of GaN HEMT
Characterization, Electronic devices
12.10.2022
14:30 – 14:45 12 Min. 3 Min.
Abstract Talk
AT 148
Suppression of impact ionization by carbon doping in the GaN buffer layer in InAlN/GaN-based HEMTs
Characterization, Electronic devices